A novel structure for a 4H-SiC Schottky barrier diode (SBD) with an inclined plane and field rings has been proposed. The silvaco computer aided design (TCAD) software, which is based on semiconductor theory, has been used to simulate the structures of the new 4H-SiC SBD and a 4H-SiC SBD with the conventional structure and the electric V-I characteristics, the breakdown voltage and heat distribution of the 4H-SiC SBD devices with different structures were compared. The new 4H-SiC SBD had a significantly better performance in terms of electric V-I characteristics and heat distribution in devices, and had a breakdown voltage of 2300V. 