Simulation and analysis of a novel 4H-SiC Schottky barrier diode

LI JunNan;ZHAN KeTao

Journal of Beijing University of Chemical Technology ›› 2012, Vol. 39 ›› Issue (4) : 117-121.

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Journal of Beijing University of Chemical Technology ›› 2012, Vol. 39 ›› Issue (4) : 117-121.

管理与数理科学

Simulation and analysis of a novel 4H-SiC Schottky barrier diode

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2012, 39(4): 117-121

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Received	Revised	Published
2011-12-30	1900-01-01	2012-07-20
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2012-07-20

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