Simulation and analysis of a SiC trench insulated gate bipolar transistor (IGBT)

LI JunNan;ZHAN KeTao

Journal of Beijing University of Chemical Technology ›› 2011, Vol. 38 ›› Issue (6) : 104-108.

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Journal of Beijing University of Chemical Technology ›› 2011, Vol. 38 ›› Issue (6) : 104-108.

机电工程和信息科学

Simulation and analysis of a SiC trench insulated gate bipolar transistor (IGBT)

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2011, 38(6): 104-108

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Received	Revised	Published
2011-05-03	1900-01-01	2011-11-20
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2011-11-20

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