金属Au纳米膜的电子输运及非线性效应

殷子文;刘翠君;李建宽;丁玉保;孟庆云*

北京化工大学学报(自然科学版) ›› 2013, Vol. 40 ›› Issue (6) : 117-122.

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北京化工大学学报(自然科学版) ›› 2013, Vol. 40 ›› Issue (6) : 117-122.
管理与数理科学

金属Au纳米膜的电子输运及非线性效应

  • 殷子文;刘翠君;李建宽;丁玉保;孟庆云*
作者信息 +

Electron transport in nanostructured gold films and nonlinear electrical conductivity characteristics

  • YIN ZiWen;LIU CuiJun;LI JianKuan;DING YuBao;MENG QingYun
Author information +
文章历史 +

摘要

使用Matlab软件对N方势垒在偏压下电流随电压的变化关系进行了模拟计算,计算结果表明N方势垒的伏安特性(I-V)曲线上显现出非线性效应和震荡效应。利用溅射方法将Au颗粒沉积在经过电化学腐蚀处理的硅基片上,得到具有纳米结构的Au膜。采用SEM对基片表面上的金膜进行观察,发现了纳米颗粒的聚集体,样品的I-V曲线测试结果表明:常温下,测得电流在0至1.5×10-6A范围内,样品电阻率呈非线性电阻效应和振荡效应;N方势垒模型的模拟计算结果与实验测量结果很好的吻合。

Abstract

Scattering of free particles by a one dimensional multi-barrier has been investigated, and the relationship between the current and voltage of the multi-barrier was calculated using Matlab software. The calculation results indicate that the volt-ampere curve possessed oscillation phenomena and nonlinear characteristics. We also discuss the influence of different structures of N-barrier systems on the volt-ampere graph. A silicon substrate was prepared using an etched silicon wafer. The etchant was a mixed solution of HF and ethanol. Films of different thickness were produced on silicon substrates by sputter deposition. The sample surface morphology was observed by field emission scanning electron microscopy (SEM). The results showed that the films were composed of discontinuous metal particles. The I-V characteristics curves were nonlinear and started to oscillate at a certain voltage. Excellent agreement between experimental data and model calculations was found.

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殷子文;刘翠君;李建宽;丁玉保;孟庆云*. 金属Au纳米膜的电子输运及非线性效应[J]. 北京化工大学学报(自然科学版), 2013, 40(6): 117-122
YIN ZiWen;LIU CuiJun;LI JianKuan;DING YuBao;MENG QingYun. Electron transport in nanostructured gold films and nonlinear electrical conductivity characteristics[J]. Journal of Beijing University of Chemical Technology, 2013, 40(6): 117-122

参考文献

[1]Müller K H, Yajadda M M A. Electron transport in discontinuous gold films and the effect of Coulomb blockade and percolation [J]. Journal of Applied Physics, 2012, 111: 123705. 
[2]Park J, Pasupathy A N, Goldsmith J I, et al. Coulomb blockade and the Kondo effect in single atom transistors [J]. Nature, 2002, 417: 722-725. 
[3]Boukhicha R, Vincent L, Renard C, et al. Gold nanocluster distribution on faceted and kinked Si nanowires [J]. Thin Solid Films, 2012, 520: 3304-3308.
[4]银建中,张宪阵,徐琴琴,等. 超临界流体沉积技术在纳米复合材料制备中的应用[J]. 化学进展,2009,21(4):606-614. 
Yin J Z, Zhang X Z, Xu Q Q, et al. Supercritical fluids deposition techniques for the formation of nanocompoites[J]. Progress in Chemistry, 2009, 21(4): 606-614. (in Chinese)
[5]高莹, 孟庆云. 室温下金属铝膜的霍尔效应初步研究[J]. 北京化工大学学报: 自然科学版, 2012, 39(2): 114-117. 
Gao Y, Meng Q Y. Preliminary study of the hall effect of aluminum metal films at room temperature [J]. Journal of Beijing University of Chemical Technology: Natural Science, 2012, 39(2) : 114-117. (in Chinese)
[6]李智睿, 孙可歆, 孟庆云. 纳米铝膜的非线性电阻效应[J]. 北京化工大学学报: 自然科学版, 2012, 39(2): 33-36. 
Li Z R, Sun K X, Meng Q Y. Nonlinear electrical conductivity characteristics of nanostructured aluminum flims[J]. Journal of Beijing University of Chemical Technology: Natural Science, 2012, 39(2): 33-36. (in Chinese)
[7]Tilkea A T, Simmelb F C, Blickc R H, et al. Coulomb b lockade in silicon nanostructures[J]. Progress in Quantum Electronics, 2001, 25: 97-138. 
[8]迟广俊, 王印月, 赵瑾, 等. 纳米金属多层膜与多层纳米线的电化学制备及其表征[J]. 物理化学学报, 2003, 19(2): 177-180. 
Chi G J, Wang Y Y, Zhao J, et al. Electrochemical preparation and characterization of metal multilayers and metal multilayer nanowires[J]. Acta Physico-Chimica Sinica, 2003, 19(2): 177-180. (in Chinese)
[9]王玉田, 庄岩, 江德生, 等. 双势垒超晶格结构的同步辐射及X射线双晶衍射研究[J]. 物理学报, 1996, 45(10): 1709-1716. 
Wang Y T, Zhuang Y, Jiang D S, et al. Study of double-barrier superlattice by synchrotron radlation and double-crystal X-ray diffraction[J]. Acta Physica Sinica, 1996, 45(10): 1709-1716. (in Chinese)
[10] 李存志, 罗恩泽, 梁昌洪. 双量子阱系统伏安特性的数值模拟[J]. 真空电子技术, 1999(2):5-9.
Li C Z, Luo E C, Liang C H. Numerical simulation of current-voltage characteristics in a double quantum well system[J]. Vacuum Electronics, 1999(2): 5-9. (in Chinese)
[11]许怀哲, 王印月, 张仿清, 等. N重方势垒结构共振隧道效应研究[J]. 物理学报, 1992, 41(9) : 1493-1498. 
Xu H Z, Wang Y Y, Zhang F Q, et al. Theoretical studies on resonant tunneling in multi-barrier structures[J]. Acta Physica Sinica, 1992, 41(9): 1493-1498. (in Chinese)
[12]唐冬和, 杜磊, 王婷岚, 等. 纳米器件电流噪声的散射理论统一模型研究[J]. 物理学报, 2011, 60(9): 097202. 
Tang D H, Du L, Wang T L, et al. A unified scattering theory model for current noise in nanoscale devices [J]. Acta Physica Sinica, 2011, 60(9): 097202. (in Chinese)
[13]刘恩科, 朱秉升, 罗晋升. 半导体物理学[ M ]. 7版 北京: 电子工业出版社, 2008. 
Liu E K, Zhu B S, Luo J S. Semiconductor Physics [M]. 7th ed. Beijing: Publishing House of Electronics Industry, 2008. (in Chinese)
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